期刊
PHYSICAL REVIEW B
卷 84, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.161412
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资金
- AFOSR MURI
- FENA
- DARPA CERA
- DOE [DE-FG02-05ER46215]
- U.S. Department of Energy (DOE) [DE-FG02-05ER46215] Funding Source: U.S. Department of Energy (DOE)
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO4 solid polymer electrolyte gate we demonstrate the filling of the high-energy subbands in bilayer graphene samples at carrier densities vertical bar n vertical bar >= 2.4 x 10(13) cm(-2). We observe a sudden increase of resistance and the onset of a second family of Shubnikov-de Haas (SdH) oscillations as these high-energy subbands are populated. From simultaneous Hall and magnetoresistance measurements, together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher-energy bands separately and find the mobilities to be at least a factor of 2 higher than those in the low-energy bands.
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