4.6 Article

Multiband transport in bilayer graphene at high carrier densities

期刊

PHYSICAL REVIEW B
卷 84, 期 16, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.161412

关键词

-

资金

  1. AFOSR MURI
  2. FENA
  3. DARPA CERA
  4. DOE [DE-FG02-05ER46215]
  5. U.S. Department of Energy (DOE) [DE-FG02-05ER46215] Funding Source: U.S. Department of Energy (DOE)

向作者/读者索取更多资源

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO4 solid polymer electrolyte gate we demonstrate the filling of the high-energy subbands in bilayer graphene samples at carrier densities vertical bar n vertical bar >= 2.4 x 10(13) cm(-2). We observe a sudden increase of resistance and the onset of a second family of Shubnikov-de Haas (SdH) oscillations as these high-energy subbands are populated. From simultaneous Hall and magnetoresistance measurements, together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher-energy bands separately and find the mobilities to be at least a factor of 2 higher than those in the low-energy bands.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据