期刊
PHYSICAL REVIEW B
卷 83, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.125408
关键词
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资金
- Cnano GraFet-e [ANR-05-NANO-010-01-NL-SBPC, ANR-2010-BLAN-0304-01-MIGRAQUEL]
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity, and diffusion constant are deduced from the low-frequency gate capacitance, its charging time, and their ratio. The admittance evolves from an rc-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0- to 200-meV investigated range at room temperature. This is consistent with a random mass model for Dirac fermions.
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