期刊
PHYSICAL REVIEW B
卷 84, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.073109
关键词
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资金
- IAMDN of Rutgers University
- National Science Foundation [NSF DMR-0845464]
- Office of Naval Research [ONR N000140910749]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [845464] Funding Source: National Science Foundation
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm-170 mu m). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak antilocalization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.
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