期刊
PHYSICAL REVIEW B
卷 83, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.041403
关键词
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资金
- DOE-BES [DE-FG02-03ER46027]
- CMSN
We propose a class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first-principles calculations. They are formed via a two-step combinatorial approach: first by strain-engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence of their band gaps, which share common features with graphene nanoribbons. A cycle of H adsorption (desorption) at (from) the same surface locations completes a reversible metal-semiconductor-metal transition with the same band gap.
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