期刊
PHYSICAL REVIEW B
卷 84, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.155406
关键词
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资金
- US Department of Energy [DE-AC36-08GO28308]
Using physical insights and advanced first-principles calculations, we suggest that corundum (alpha-Al2O3) is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence-band offsets for these systems are large enough to create an injection barrier. Remarkably, a band gap of similar to 180 meV can be induced in a graphene layer adsorbed on an Al-terminated surface with an electron effective mass of similar to 8 x 10(-3) me. Moreover, the band gaps of a graphene/Al2O3 system could be tuned by an external electric field for practical applications.
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