期刊
PHYSICAL REVIEW B
卷 84, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.115127
关键词
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资金
- NIMS
- Japan Society for the Promotion of Science (JSPS) [20001004, 22246083]
- Grants-in-Aid for Scientific Research [22246083, 22013015, 22340093, 22245023, 20001004, 22560676] Funding Source: KAKEN
Electronic transport properties in the spin-orbit Mott insulator Ba2IrO4 were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba2IrO4. In the insulating state (P < 13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P >= 13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba2IrO4 exhibits an unconventional critical exponent (delta = 1-2) at the M-I transition. These results suggest that Ba2IrO4 has an unusual electronic state affected by the marginal quantum critical point (MQCP).
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