Coulomb oscillations in the Fano-Kondo effect and zero-bias anomalies in a double-dot mesotransistor

We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki et al. [Phys. Rev. Lett. 103, 266806 (2009)]. The setup consists of connecting the Kondo dot directly to the leads, while the side dot provides an interference path which affects the Kondo correlations. We analyze the oscillations of the source-drain current due to the periodical Coulomb blockade of the many-level side dot at the variation of the gate potential applied on it. The Fano profile of these oscillations may be controlled by the interdot coupling, level spacing of the side dot, and also by the temperature. The nonequilibrium conductance of the double-dot system exhibits zero-bias anomaly which, besides the usual enhancement, may show also a suppression (a diplike aspect) which occurs around the Fano zero. In the same region, the weak temperature dependence of the conductance indicates the suppression of the Kondo effect. Scaling properties of the nonequilibrium conductance in the Fano-Kondo regime are discussed. Since the Kondo temperature of the single-impurity Anderson model is no longer the proper scaling parameter, we look for an alternative specific to the double dot. The extended Anderson model, Keldysh formalism, and equation-of-motion technique are used.