期刊
PHYSICAL REVIEW B
卷 83, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.075401
关键词
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资金
- Nanosciences Fondation at Grenoble, France
- NSF [DMR-0906498]
- European Community [214989]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906498] Funding Source: National Science Foundation
Single dopants in semiconductor nanostructures have been studied in great detail recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report the coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate-equation theory developed in parallel with the experiment.
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