期刊
PHYSICAL REVIEW B
卷 84, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.155323
关键词
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资金
- SEPNET
- EPSRC
- DFG [SPP 1285]
- excellence cluster QUEST
- Engineering and Physical Sciences Research Council [EP/F026455/1] Funding Source: researchfish
- EPSRC [EP/F026455/1] Funding Source: UKRI
We show experimentally, using spin quantum beat spectroscopy, that strain applied to an undoped symmetric (001) GaAs/AlGaAs multiple quantum well causes an in-plane anisotropy of the spin-relaxation rate Gamma(s), but leaves the electron Lande g factor isotropic. The spin-relaxation-rate anisotropy gives a direct measure of the bulk inversion asymmetry and the strain contributions to the conduction-band spin splitting. The comparison of the measured strain-splitting coefficient C(3) for the quantum well with the value for bulk GaAs suggests a dependence on electron quantum confinement. The isotropic g factor implies a symmetric conduction electron wave function, whereas the anisotropic spin-relaxation rate requires a nonzero expectation value of the valence-band potential gradient on the conduction-band states. Therefore, the experiment suggests that strain generates an effective valence-band potential gradient, while the conduction-band potential remains symmetrical to a good approximation.
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