期刊
PHYSICAL REVIEW B
卷 84, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.035308
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资金
- Impuls- und Vernetzungsfonds of the Helmholtz-Association [VH-NG-423]
- Department of Energy, Basic Energy Sciences [DE-AC02-05CH11231]
The electronic structure of Cu2ZnSnS4 has been investigated by S L-2,L-3 x-ray emission and absorption spectroscopy. An empirical assignment of the most prominent spectral features of the valence and conduction band, respectively, can be made based on a comparison with spectra of corresponding binary compounds and with calculated densities of states. We find that the top of the valence band is dominated by hybridized antibonding Cu 3d-S 3p states, while the bottom of the conduction band is dominated by respective Sn 5s-S 3p states. We also determine the electronic band gap near the Cu2ZnSnS4 surface to be 1.5 (+/- 0.3) eV.
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