期刊
PHYSICAL REVIEW B
卷 83, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.113403
关键词
-
资金
- DOE [DE-FG02-07ER46351]
- NSF [ECCS-0802214]
In graphene devices with a varying degree of disorders as characterized by their carrier mobility and minimum conductivity, we have studied thermoelectric power along with electrical conductivity over a wide range of temperatures. We have found that the Mott relation fails in the vicinity of the Dirac point in high-mobility graphene. By properly taking account of high-temperature effects, we have obtained good agreement between the Boltzmann transport theory and our experimental data. In low-mobility graphene where the charged impurities induce relatively high residual carrier density, the Mott relation holds at all gate voltages.
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