4.6 Article

Nonadiabatic quantum control of a semiconductor charge qubit

期刊

PHYSICAL REVIEW B
卷 84, 期 16, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.161302

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资金

  1. Sloan Foundation
  2. Packard Foundation
  3. NSF [DMR-0819860, DMR-0846341]
  4. DARPA QuEST [HR0011-09-1-0007]
  5. DARPA [N66001-09-1-2020]
  6. UCSB NSF DMR MRSEC
  7. Direct For Mathematical & Physical Scien
  8. Division Of Materials Research [819860] Funding Source: National Science Foundation
  9. Division Of Materials Research
  10. Direct For Mathematical & Physical Scien [0846341] Funding Source: National Science Foundation

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We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point-contact charge sensor. We observe Ramsey fringes in the excited-state occupation in response to a pi/2-pi/2 pulse sequence and extract T-2* similar to 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.

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