Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells

The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in semiconductor quantum wells is analyzed. Our microscopic approach is based on a 14 X 14 k.p band-structure theory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of the photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are numerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions and ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the excitation conditions, in particular, the photon energy are computed and discussed.