期刊
PHYSICAL REVIEW B
卷 81, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.235408
关键词
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资金
- Deutsche Forschungsgemeinschaft (DFG)
- National Science Foundation [DMR-0537588]
The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp(3)-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp(2)-hybridized graphene layer with improved electronic properties.
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