4.6 Article

Temperature dependence of tunneling magnetoresistance in epitaxial magnetic tunnel junctions using a Co2FeAl Heusler alloy electrode

期刊

PHYSICAL REVIEW B
卷 82, 期 9, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.092402

关键词

-

资金

  1. NEDO
  2. CREST
  3. JST-DFG

向作者/读者索取更多资源

Spin-valve-type epitaxial magnetic tunnel junctions (MTJs) consisting of a full-Heusler alloy Co2FeAl (CFA) and a MgO tunnel barrier were fabricated on a single-crystal MgO(001) substrate using sputtering method for all the layers. Experimental temperature-dependent tunnel magnetoresistance in the MTJs was revealed to be fitted well using spin wave excitation model for tunneling spin polarization, P(T) = P-0(1-alpha T-3/2) up to room temperature, where P-0 is the spin polarization at 0 K and alpha is a fitting parameter. The determined P and alpha are shown to be significantly different between bottom and top CFA electrodes facing a MgO barrier. It is demonstrated that the bottom CFA deposited on a Cr buffer has a low alpha and behaves as a half-metal with P similar to 1 in terms of the Delta(1) symmetry due to the coherent tunneling through a MgO barrier.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据