期刊
PHYSICAL REVIEW B
卷 82, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.193204
关键词
-
资金
- 973 program of the National Basic Research Program of China [G2009CB929300]
- National Natural Science Foundation of China [60821061, 60776061]
- Chinese Academy of Sciences
- U.S. Department of Energy [DE-AC36-08GO28308]
For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs(1-x)N(x) becomes an N-derived state and the valence-band edge of GaAs(1-x)Bi(x) becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据