期刊
PHYSICAL REVIEW B
卷 81, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.245408
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资金
- NSF [DMR-0804908, DMR-0820382 (MRSEC)]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, approximate to 10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1 x 1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.
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