期刊
PHYSICAL REVIEW B
卷 81, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.195309
关键词
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资金
- JSPS [19674002, 20030004]
- AFOSR [AOARD-08-4099]
- Grants-in-Aid for Scientific Research [20030004, 19674002] Funding Source: KAKEN
We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5 x 10(18) cm(-3), which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are essentially due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of a closed three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.
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