期刊
PHYSICAL REVIEW B
卷 82, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.085302
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资金
- NSF [ECCS-0822036]
- ARRA CAREER [DMR-0843985]
- Industrial Technology Research [09E51007d]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0843985] Funding Source: National Science Foundation
We report a systematic study of the bias stress effect at semiconductor-dielectric interfaces using single-crystal organic field-effect transistors as a test bed. A combination of electrical transport and ultraviolet photoelectron spectroscopy suggests that this instability is due to a ground-state (i.e., occurring in the dark) charge transfer of holes from the accumulation channel of the semiconductor to localized states of a disordered insulator. The proposed model is not semiconductor specific and therefore provides a general analytical description of this instability in a variety of organic and inorganic band semiconductors interfaced with amorphous insulators.
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