期刊
PHYSICAL REVIEW B
卷 81, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.193412
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资金
- National Research Foundation of Korea [NRF-2009-0093845]
- National Research Foundation of Korea [2005-0093845, 2009-0093845] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of localization grows with increasing of H concentration. Calculations show that the conductances through low-energy propagating channels decay exponentially with sample size and are well fitted by one-parameter scaling function, similar to a disorder-driven metal-insulator transition in two-dimensional disordered systems.
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