期刊
PHYSICAL REVIEW B
卷 81, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.115459
关键词
-
资金
- NSF [DMR-0457533]
We probe electromechanical properties of InAs nanowire (diameter similar to 100 nm) resonators where the suspended nanowire is also the active channel of a field-effect transistor. We observe and explain the nonmonotonic dispersion of the resonant frequency with dc gate voltage (V-g(dc)). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with V-g(dc). We also experimentally probe and quantitatively explain the hysteretic nonlinear properties, as a function of V-g(dc), of the resonator using the Duffing equation.
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