期刊
PHYSICAL REVIEW B
卷 82, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.045405
关键词
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资金
- EPSRC [EP/G041954, EP/G035954]
- Engineering and Physical Sciences Research Council [EP/G041954/1, EP/G035954/1] Funding Source: researchfish
- EPSRC [EP/G035954/1, EP/G041954/1] Funding Source: UKRI
We investigate the contribution of the low-energy electronic excitations toward the Raman spectrum of bilayer graphene for the incoming photon energy Omega greater than or similar to 1 eV. Starting with the four-band tight-binding model, we derive an effective scattering amplitude that can be incorporated into the commonly used two-band approximation. Due to the influence of the high-energy bands, this effective scattering amplitude is different from the contact interaction amplitude obtained within the two-band model alone. We then calculate the spectral density of the inelastic light scattering accompanied by the excitation of electron-hole pairs in bilayer graphene. In the absence of a magnetic field, due to the parabolic dispersion of the low-energy bands in a bilayer crystal, this contribution is constant and in doped structures has a threshold at twice the Fermi energy. In an external magnetic field, the dominant Raman-active modes are the n(-) -> n(+) inter-Landau-level transitions with crossed polarization of in/out photons. We estimate the quantum efficiency of a single n(-) -> n(+) transition in the magnetic field of 10 T as In- (n+) similar to 10(-12).
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