相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Strain relaxation in high Ge content SiGe layers deposited on Si
G. Capellini et al.
JOURNAL OF APPLIED PHYSICS (2010)
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
V. A. Shah et al.
JOURNAL OF APPLIED PHYSICS (2010)
Si/SiGe quantum cascade superlattice designs for terahertz emission
G. Matmon et al.
JOURNAL OF APPLIED PHYSICS (2010)
The progress towards terahertz quantum cascade lasers on silicon substrates
Douglas J. Paul
LASER & PHOTONICS REVIEWS (2010)
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells
Giovanni Pizzi et al.
NANOTECHNOLOGY (2010)
Conduction band intersubband transitions in Ge/SiGe quantum wells
M. De Seta et al.
APPLIED PHYSICS LETTERS (2009)
Valence band energy in confined Si1-xGex (0.28<x<0.93) layers
V. V. Afanas'ev et al.
APPLIED PHYSICS LETTERS (2009)
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment
Michele Virgilio et al.
PHYSICAL REVIEW B (2009)
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells
G. Ciasca et al.
PHYSICAL REVIEW B (2009)
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion
C. Lange et al.
PHYSICAL REVIEW B (2009)
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
V. A. Shah et al.
APPLIED PHYSICS LETTERS (2008)
Phonon strain shift coefficients in Si1-xGex alloys
F. Pezzoli et al.
JOURNAL OF APPLIED PHYSICS (2008)
Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots
S. V. Kondratenko et al.
NANOTECHNOLOGY (2008)
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
M. Bonfanti et al.
PHYSICAL REVIEW B (2008)
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description
Michele Virgilio et al.
PHYSICAL REVIEW B (2008)
Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells
S. Tsujino et al.
APPLIED PHYSICS LETTERS (2006)
Silicon-based injection lasers using electronic intersubband transitions in the L valleys
Kristina Driscoll et al.
APPLIED PHYSICS LETTERS (2006)
Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates:: A tight-binding approach
Michele Virgilio et al.
JOURNAL OF APPLIED PHYSICS (2006)
Strain-induced shift of phonon modes in Si1-xGex alloys
F. Pezzoli et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
Type-I alignment and direct fundamental gap in SiGe based heterostructures
M Virgilio et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2006)
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
YH Kuo et al.
NATURE (2005)
Scattering mechanisms in high-mobility strained Ge channels
B Rössner et al.
APPLIED PHYSICS LETTERS (2004)
Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters
R Bates et al.
APPLIED PHYSICS LETTERS (2003)
Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
SA Lynch et al.
APPLIED PHYSICS LETTERS (2002)