期刊
PHYSICAL REVIEW B
卷 82, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.82.245201
关键词
-
资金
- Ministry of Science of Spain [MAT2007-66696]
- FPI
We report the structural, magnetic, and electronic phase diagram of Cr1-xVxN. Stoichiometric CrN is a narrow gap, correlation-induced, semiconductor that orders antiferromagnetically below 286 K. The changes in the chemical bond associated to the magnetic order result in a nonactivated behavior of the resistivity in the antiferromagnetic state. Introducing holes into this system produces a series of inhomogeneous magnetic/electronic states, as identified through electronic and thermal conductivity, and magnetic susceptibility. The magnetic/electronic phase diagram of Cr1-xVxN is an example of electronic complexity in a simple system from the chemical and structural point of view.
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