期刊
PHYSICAL REVIEW B
卷 81, 期 12, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.121407
关键词
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资金
- NSF [DMR/0748910, ECCS 0926056]
- ONR [N00014-09-1-0724]
- UCOP
Using high-quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage V-tg is varied. In the V-tg-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise from Coulomb-induced charging of electron- or hole-doped localized states when the device bulk is delocalized, underscoring the importance of electronic interactions in graphene in the QH regime.
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