4.6 Article

Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides: An ab initio study

期刊

PHYSICAL REVIEW B
卷 79, 期 16, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.161402

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ab initio calculations; energy gap; hopping conduction; interface states; lanthanum compounds; metal-insulator transition; strontium compounds

资金

  1. National Science Foundation [MRSEC DMR 0520495]

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We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high conductivity observed at the TiO2/LaO interface and the lack of similar conductivity at the SrO/AlO2 interface are inherent in the atomic geometry of the system. A large interfacial hopping matrix element between cations causes the formation of a bound electron state at the TiO2/LaO interface. This mechanism for the formation of interfacial bound states suggests a robust means for tuning conductivities at various oxide heterointerfaces.

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