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M. Moret et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Electronic and optical properties of III-nitrides under pressure
N. E. Christensen et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2009)
Electronic structure and effective masses of InN under pressure
I. Gorczyca et al.
JOURNAL OF APPLIED PHYSICS (2008)
Optical energies of AlInN epilayers
K. Wang et al.
JOURNAL OF APPLIED PHYSICS (2008)
Bowing of the band gap pressure coefficient in InxGa1-xN alloys
G. Franssen et al.
JOURNAL OF APPLIED PHYSICS (2008)
Strain-induced conduction-band spin splitting in GaAs from first-principles calculations
Athanasios N. Chantis et al.
PHYSICAL REVIEW B (2008)
Modeling the compositional instability in wurtzite Ga1-xInxN
M. G. Ganchenkova et al.
PHYSICAL REVIEW B (2008)
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke et al.
PHYSICAL REVIEW B (2008)
Calculated optical properties of wurtzite InN
H. Jin et al.
JOURNAL OF APPLIED PHYSICS (2007)
Self-consistent band-gap corrections in density functional theory using modified pseudopotentials
David Segev et al.
PHYSICAL REVIEW B (2007)
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
P. Rinke et al.
APPLIED PHYSICS LETTERS (2006)
Phase stability, chemical bonds, and gap bowing of InxGa1-xN alloys:: Comparison between cubic and wurtzite structures
C. Caetano et al.
PHYSICAL REVIEW B (2006)
Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy
Wataru Terashima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Theoretical study of the band-gap anomaly of InN
P Carrier et al.
JOURNAL OF APPLIED PHYSICS (2005)
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
B Arnaudov et al.
PHYSICAL REVIEW B (2004)
Anisotropy of the dielectric function for wurtzite InN
R Goldhahn et al.
SUPERLATTICES AND MICROSTRUCTURES (2004)
All-electron self-consistent GW approximation:: Application to Si, MnO, and NiO -: art. no. 126406
SV Faleev et al.
PHYSICAL REVIEW LETTERS (2004)
Vegard's law deviation in lattice constant and band gap bowing parameter of zincblende InxGa1-xN
YK Kuo et al.
OPTICS COMMUNICATIONS (2004)
Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
SX Li et al.
APPLIED PHYSICS LETTERS (2003)
Temperature dependence of the fundamental band gap of InN
J Wu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Lattice parameter and energy band gap of cubic AlxGayIn1-x-yN quaternary alloys
M Marques et al.
APPLIED PHYSICS LETTERS (2003)
Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
D Fritsch et al.
PHYSICAL REVIEW B (2003)
Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN
SH Wei et al.
PHYSICAL REVIEW B (2003)
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1-xN alloys:: Ab initio calculations
LK Teles et al.
JOURNAL OF APPLIED PHYSICS (2002)
Small band gap bowing in In1-xGaxN alloys
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Unusual properties of the fundamental band gap of InN
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys
CH Chen et al.
APPLIED PHYSICS LETTERS (2002)
Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures -: art. no. 115319
P Perlin et al.
PHYSICAL REVIEW B (2001)
Influence of composition fluctuations and strain on gap bowing in InxGa1-xN -: art. no. 085204
LK Teles et al.
PHYSICAL REVIEW B (2001)
Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy
S Yamaguchi et al.
APPLIED PHYSICS LETTERS (2000)