期刊
PHYSICAL REVIEW B
卷 79, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.155205
关键词
carrier density; excitons; gallium arsenide; Green's function methods; III-V semiconductors; photoluminescence; Raman spectra; ultraviolet spectra; visible spectra
We present a detailed theoretical analysis of light-absorption and luminescence of bulk semiconductors at finite electron-hole densities and temperatures. The analysis is carried out within a real-time Green's-function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The theory is applied to a two-band model of GaAs, for which the single-particle self-energies and spectral functions and the absorption and luminescence spectra are calculated. The effects of excitonic correlations on these quantities are highlighted.
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