期刊
PHYSICAL REVIEW B
卷 80, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.233201
关键词
bismuth compounds; cryogenics; electronic density of states; impurities; Shubnikov-de Haas effect; thermoelectric power; thermomagnetic effects; tin; valence bands
资金
- BSST
- LLC
Tin is a known resonant impurity in the valence band of Bi2Te3 that was previously reported to enhance the thermoelectric power S of the host material at cryogenic temperatures through resonant scattering. We show here that Sn provides an excess density of states (DOS) about 15 meV below the valence band edge and that it is the increases in DOS itself that enhances S of this technologically important semiconductor even at room temperature. The experimental proof for the existence of this resonant level comes from Shubnikov-de Haas measurements combined with galvanomagnetic and thermomagnetic properties measurements.
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