期刊
PHYSICAL REVIEW B
卷 80, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.075406
关键词
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资金
- ONR [N00014-09-1-0117]
- NSF [DMR0450037, DMR-0748910, DMR-0820414]
- CNID [ONR/DMEAH9400307-2-0703]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [820414, 0847801] Funding Source: National Science Foundation
We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope n type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n type or weakly p type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.
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