期刊
PHYSICAL REVIEW B
卷 80, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.233301
关键词
gallium compounds; III-V semiconductors; microcavities; phase diagrams; polaritons; renormalisation
资金
- EU
- Swiss National Science Foundation
- FNS [200020-113542]
The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P(thr) at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormalization of the polariton dispersion curve, namely, a reduced normal-mode splitting compared to the low-density regime. Next the dependence of P(thr) as a function of exciton-photon detuning is investigated in the 4-340 K temperature range, which allows accessing the polariton lasing phase diagram. The observation of polariton lasing over such a broad range of temperatures reveals a clear transition from a kinetic to a thermodynamic regime with increasing temperature.
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