期刊
PHYSICAL REVIEW B
卷 80, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.024105
关键词
bismuth compounds; electric domains; electrical conductivity; ferroelectric thin films; magnetic domains; magnetic epitaxial layers; multiferroics; pulsed laser deposition
资金
- Nanyang Technological University
- Ministry of Education of Singapore [AcRF RG30/06, ARC 16/08]
The growth window of multiferroic BiFeO3 thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure BiFeO3 thin films can be obtained, different oxygen partial pressures still lead to substantial variation in Bi/Fe ratio in the film, which closely link with the corresponding ferroelectric properties. Piezoelectric force microscopy also reveals significant difference in the domain structures of these films. A defect-dipole complex model is proposed to explain the difference in the electrical properties and domain structures for films grown under different oxygen pressures.
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