期刊
PHYSICAL REVIEW B
卷 80, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.205401
关键词
-
资金
- Research Council of Norway [158518/431, 158547/431]
- JSPS [167498/V30]
We study how the surface states in the strong topological insulator Bi2Se3 are influenced by finite size effects and compare our results with those recently obtained for two-dimensional topological insulator HgTe. We demonstrate two important distinctions: (i) contrary to HgTe, the surface states in Bi2Se3 display a remarkable robustness towards decreasing the width L down to a few nm thus ensuring that the topological surface states remain intact and (ii) the gapping due to the hybridization of the surface states features an oscillating exponential decay as a function of L in Bi2Se3 in sharp contrast to HgTe. Our findings suggest that Bi2Se3 is suitable for nanoscale applications in quantum computing or spintronics. Also, we propose a way to experimentally detect both of the predicted effects.
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