期刊
PHYSICAL REVIEW B
卷 79, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.075426
关键词
band structure; Coulomb blockade; graphene; localised states; magnetic field effects
资金
- Swiss National Science Foundation
We present measurements on side-gated graphene constrictions of different geometries. We characterize the transport gap by its width in back-gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side-gate voltage on the transport gap and show that high side-gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.
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