期刊
PHYSICAL REVIEW B
卷 80, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.235415
关键词
carrier density; electron-hole recombination; graphene; impurity states; thermoelectric power
资金
- US-ONR
- NSF-NRI-SWAN
Motivated by recent experiments by Yuri M. Zuev [Phys. Rev. Lett. 102, 096807 (2009)], Peng Wei [Phys. Rev. Lett. 102, 166808 (2009)], and Joseph G. Checkelsky [Phys. Rev. B 80, 081413(R) (2009)], we calculate the thermopower of graphene incorporating the energy dependence of various transport scattering times. We find that scattering by screened charged impurities gives a reasonable explanation for the measured thermopower. The calculated thermopower behaves as 1/n at high densities, but saturates at low densities. We also find that the thermopower scales with the normalized temperature T/T-F and does not depend on the impurity densities, but strongly depends on the fine-structure constant r(s) and on the location of the impurities. We discuss the deviation from the Mott formula in graphene thermopower and use an effective-medium theory to calculate thermopower at low carrier density regimes where electron-hole puddles dominate.
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