期刊
PHYSICAL REVIEW B
卷 79, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.195412
关键词
atomic force microscopy; elemental semiconductors; silicon; surface reconstruction
资金
- JST-CREST
- Japan Society for the Promotion of Science [20360022]
- Grants-in-Aid for Scientific Research [20360022] Funding Source: KAKEN
Lateral force gradient of down to 0.01 N/m on Si(111)-7x7 was directly detected by dynamic lateral-force microscopy with an amplitude of 81 pm. Positive and negative torsional resonance frequency shifts of a silicon cantilever caused by the attractive interaction inward and outward tip ditherings were detected on adatom and nonadatom sites, respectively. The lateral force of down to subpiconewton was measurable with direct lateral-force spectroscopy. The converted lateral force predicts a possibility of the stick-slip motion in the noncontact region. The theoretical calculations were in good qualitative agreement with the experiments.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据