相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films
S. Lautenschlaeger et al.
PHYSICAL REVIEW B (2008)
Ionized and neutral donor-bound excitons in ZnO
B. K. Meyer et al.
PHYSICAL REVIEW B (2007)
Comparative study of the (0001) and 000(1)over-bar surfaces of ZnO
S. A. Chevtchenko et al.
APPLIED PHYSICS LETTERS (2006)
Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy
Huaizhe Xu et al.
APPLIED PHYSICS LETTERS (2006)
Evidence for native-defect donors in n-type ZnO -: art. no. 225502
DC Look et al.
PHYSICAL REVIEW LETTERS (2005)
A comprehensive review of ZnO materials and devices -: art. no. 041301
U Ozgür et al.
JOURNAL OF APPLIED PHYSICS (2005)
Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
F Tuomisto et al.
APPLIED PHYSICS LETTERS (2005)
Pressure dependence of the lattice dynamics of ZnO:: An ab initio approach -: art. no. 094306
J Serrano et al.
PHYSICAL REVIEW B (2004)
Bound exciton and donor-acceptor pair recombinations in ZnO
BK Meyer et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2004)
Characteristics of polarity-controlled ZnO films fabricated using the homoepitaxy technique
H Matsui et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2004)
Influences of biaxial strains on the vibrational and exciton energies in ZnO
T Gruber et al.
JOURNAL OF APPLIED PHYSICS (2004)
Excitonic fine structure and recombination dynamics in single-crystalline ZnO -: art. no. 195207
A Teke et al.
PHYSICAL REVIEW B (2004)
Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains -: art. no. 195310
TV Shubina et al.
PHYSICAL REVIEW B (2003)
Density-functional study of the structure and stability of ZnO surfaces
B Meyer et al.
PHYSICAL REVIEW B (2003)
Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal
SF Chichibu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
DC Look et al.
APPLIED PHYSICS LETTERS (2002)
High-pressure Raman spectroscopy study of wurtzite ZnO
F Decremps et al.
PHYSICAL REVIEW B (2002)
Polariton and free-exciton-like photoluminescence in ZnO
DC Reynolds et al.
APPLIED PHYSICS LETTERS (2001)
Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers
B Gil et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2001)
Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode
XL Guo et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2001)
Magnesium incorporation in GaN grown by molecular-beam epitaxy
AJ Ptak et al.
APPLIED PHYSICS LETTERS (2001)
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
V Ratnikov et al.
JOURNAL OF APPLIED PHYSICS (2000)
Photoluminescence measurements from the two polar faces of ZnO
RE Sherriff et al.
JOURNAL OF APPLIED PHYSICS (2000)
Dependence of impurity incorporation on the polar direction of GaN film growth
M Sumiya et al.
APPLIED PHYSICS LETTERS (2000)
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
LK Li et al.
APPLIED PHYSICS LETTERS (2000)