期刊
PHYSICAL REVIEW B
卷 79, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.045307
关键词
electronic structure; excitons; gallium arsenide; g-factor; III-V semiconductors; indium compounds; k; p calculations; piezoelectricity; relativistic band structure calculations; semiconductor heterojunctions; semiconductor quantum dots; tensors
资金
- Deutsche Forschungsgemeinschaft [SFB 631, SPP 1285]
- Austrian Science Fund FWF (SFB IRON)
- Nanosystems Initiative Munich (NIM)
We present a quantitative theoretical analysis of electron, hole, and exciton g tensors of vertically coupled InAs/GaAs quantum dot pairs in external electric and magnetic fields. For magnetic fields lying in the growth plane, we predict a giant electrically tunable anisotropy of hole g factors that is introduced by piezoelectric charges. This effect allows bias controlled g factor switching and single-spin manipulations in a static magnetic field. We use a relativistic eight-band k center dot p envelope function method including strain, which accounts for magnetic fields in a gauge-invariant manner. In a regime where the molecular wave functions form bonding and antibonding orbitals and for vertical magnetic fields, our results reproduce experimentally observed resonant enhancements of exciton g factors without any fitting parameters.
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