期刊
PHYSICAL REVIEW B
卷 79, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.035411
关键词
bound states; carrier lifetime; fermion systems; nanostructured materials; p-n junctions
资金
- Ministry of Science and Technology of Vietnam [4.023.06]
We suggest a simple approach for studying the quasi-bound fermion states induced by one-dimensional potentials in graphene. Detailed calculations have been performed for symmetric double barrier structures and n-p-n junctions. Besides the crucial role of the transverse motion of carriers, we systematically examine the influence of different structure parameters such as the barrier width in double barrier structures or the potential slope in n-p-n junctions on the energy spectrum and, especially, on the resonant-level width and, therefore, the localization of quasi-bound states.
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