期刊
PHYSICAL REVIEW B
卷 79, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.161307
关键词
gallium arsenide; Kondo effect; semiconductor heterojunctions; semiconductor quantum wires; spin polarised transport; Zeeman effect
资金
- Northrop Grumman Space Technology Doctoral Foundation
- Toshiba Research Europe
- Engineering and Physical Sciences Research Council [EP/D008506/1] Funding Source: researchfish
- EPSRC [EP/D008506/1] Funding Source: UKRI
We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behavior of the zero-bias anomaly against predictions from Kondo and spin-polarization models. Both theories display shortcomings, the most dramatic of which is the linear electron-density dependence of the zero-bias anomaly spin splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch off.
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