4.6 Article

Zero-bias anomaly in quantum wires

期刊

PHYSICAL REVIEW B
卷 79, 期 16, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.161307

关键词

gallium arsenide; Kondo effect; semiconductor heterojunctions; semiconductor quantum wires; spin polarised transport; Zeeman effect

资金

  1. Northrop Grumman Space Technology Doctoral Foundation
  2. Toshiba Research Europe
  3. Engineering and Physical Sciences Research Council [EP/D008506/1] Funding Source: researchfish
  4. EPSRC [EP/D008506/1] Funding Source: UKRI

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We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behavior of the zero-bias anomaly against predictions from Kondo and spin-polarization models. Both theories display shortcomings, the most dramatic of which is the linear electron-density dependence of the zero-bias anomaly spin splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch off.

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