期刊
PHYSICAL REVIEW B
卷 79, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.115311
关键词
carrier density; electrical resistivity; electron traps; grain boundaries; Hall mobility; hole traps; IV-VI semiconductors; lead compounds; nanocomposites; Seebeck effect; silver
资金
- U.S. Army Medical Research and Materiel Command [W81XWH-07-1-0708]
- University of South Florida Functional Materials and Manufacturing by Design (FMMD)
Resistivity, Seebeck coefficient, and Hall measurements were performed on densified nanocrystalline composite materials of undoped and Ag-doped PbTe nanocrystals to investigate the physical mechanisms responsible for Seebeck coefficient enhancement in nanocrystalline systems. The unique temperature dependence of the resistivity and mobility for these PbTe nanocomposites suggests that grain-boundary potential barrier scattering is the dominant scattering mechanism. We propose that carrier trapping in the grain boundaries forms energy barriers that impede the conduction of carriers between grains, essentially filtering charge carriers with energy less than the barrier height. These nanocomposites therefore demonstrate an enhanced Seebeck coefficient as compared to single crystal or polycrystalline PbTe at similar carrier concentrations.
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