4.6 Article

Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors

期刊

PHYSICAL REVIEW B
卷 80, 期 4, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.041305

关键词

-

向作者/读者索取更多资源

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and the sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and theory establish that this tunability derives not just simply from the bias dependence of the tunneling conductances G(up arrow,down arrow) (a property of the interface), but also from the bias dependence of electric fields in the semiconductor which can dramatically enhance or suppress spin-detection sensitivities. Electrons in GaAs with fixed polarization can therefore be made to induce either positive or negative voltage changes at spin detectors, and some detector sensitivities can be enhanced over tenfold compared to the usual case of zero-bias spin detection.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据