期刊
PHYSICAL REVIEW B
卷 80, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.014114
关键词
elemental semiconductors; germanium; interstitials; transmission electron microscopy
资金
- (U.S.) Department of Energy [AC0205CH11231, DE-AC02-05CH11231]
- National Energy Research Scientific Computing Center
We report the formation and direct observation of self-interstitials in surface proximity of an elemental semiconductor by exploiting subthreshold effects in a new generation of aberration-corrected transmission electron microscopes. We find that the germanium interstitial atoms reside close to hexagonal, tetragonal, and S-interstitial sites. Using phase-contrast microscopy, we demonstrate that the three-dimensional position of interstitial atoms can be determined from contrast analysis, with subnanometer precision along the electron-beam direction. Comparison with a first-principles study suggests a strong influence of the surface proximity or a positively charged interstitial. More generally, our investigation demonstrates that imaging of single atom can now be utilized to directly visualize single-defect formation and migration. These high-resolution electron microscopy studies are applicable to a wide range of materials since the reported noise level of the images even allows the detection of single-light atoms.
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