期刊
PHYSICAL REVIEW B
卷 79, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.193312
关键词
amorphous state; atomic clusters; elemental semiconductors; erbium; excited states; nanostructured materials; positive ions; silicon
资金
- EC [FP6-IST033574]
We report on the energy-transfer mechanism between amorphous Si nanoclusters and erbium ions in a SiO2 matrix. We have studied a set of optimized samples which show maximum Er3+ to Si-nc coupling ratio. We demonstrate that the transfer mainly occurs to the I-4(11/2) level in less than 100 ns and that higher Er3+ energetic levels are not involved. Furthermore, we show that there are no traces of Auger back-transfer, excited state absorption, or pair-induced quenching mechanisms in our samples, leading us to propose a model in which the short interaction distance between Si-nc and Er3+ ions is the limiting factor for the noncomplete excitation of the whole Er3+ active population.
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