相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
M. de la Mare et al.
APPLIED PHYSICS LETTERS (2009)
Trends in the electronic structure of dilute nitride alloys
E. P. O'Reilly et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Properties of dilute InAsN layers grown by liquid phase epitaxy
S. Dhar et al.
APPLIED PHYSICS LETTERS (2008)
Rapid preparation method of bulk nanostructured Yb0.3Co4Sb12+y compounds and their improved thermoelectric performance
Han Li et al.
APPLIED PHYSICS LETTERS (2008)
Room temperature photoluminescence at 4.5 μm from InAsN
Q. Zhuang et al.
JOURNAL OF APPLIED PHYSICS (2008)
Classical and quantum routes to linear magnetoresistance
Jingshi Hu et al.
NATURE MATERIALS (2008)
Electron effective mass and Si-donor binding energy in GaAs1-xNx probed by a high magnetic field
G. Allison et al.
PHYSICAL REVIEW B (2008)
First principles calculations for dilute InAs1-xNx alloys
H. Benaissa et al.
JOURNAL OF APPLIED PHYSICS (2007)
Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy
Michael M. Oye et al.
APPLIED PHYSICS LETTERS (2007)
Recent progress on 1.55-μm dilute-nitride lasers
Seth R. Bank et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2007)
Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
M. Merrick et al.
PHYSICAL REVIEW B (2007)
Electron-nitrogen scattering in dilute nitrides
M. P. Vaughan et al.
PHYSICAL REVIEW B (2007)
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
Marco Felici et al.
ADVANCED MATERIALS (2006)
Symmetry of the conduction-band minimum in AlP-GaP quantum wells
M. P. Semtsiv et al.
PHYSICAL REVIEW B (2006)
Alloy scattering of n-type carriers in GaNxAs1-x
S. Fahy et al.
PHYSICAL REVIEW B (2006)
MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer
S. Kuboya et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Mutual passivation of donors and isovalent nitrogen in GaAs
J Li et al.
PHYSICAL REVIEW LETTERS (2006)
Terahertz response of hot electrons in dilute nitride Ga(AsN) alloys -: art. no. 032107
A Ignatov et al.
APPLIED PHYSICS LETTERS (2006)
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
TD Veal et al.
APPLIED PHYSICS LETTERS (2005)
Classical magnetotransport of inhomogeneous conductors
MM Parish et al.
PHYSICAL REVIEW B (2005)
Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations
DR Hang et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2004)
Electron conduction in two-dimensional GaAs1-yNy channels -: art. no. 153305
D Fowler et al.
PHYSICAL REVIEW B (2004)
2.9 THz quantum cascade lasers operating up to 70 K in continuous wave
S Barbieri et al.
APPLIED PHYSICS LETTERS (2004)
Band-structure engineering to control impact ionisation and related high-field processes
AR Adams
ELECTRONICS LETTERS (2004)
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay et al.
PHYSICAL REVIEW LETTERS (2004)
Non-saturating magnetoresistance in heavily disordered semiconductors
MM Parish et al.
NATURE (2003)
Quantum linear magnetoresistance; solution of an old mystery
AA Abrikosov
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL (2003)
Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures
R Mouillet et al.
SOLID STATE COMMUNICATIONS (2003)
Band gap reduction in InAsN alloys
DK Shih et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
Mutual passivation of electrically active and isovalent impurities
KM Yu et al.
NATURE MATERIALS (2002)
Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well
DR Hang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2002)
Band anticrossing in dilute InNxSb1-x
BN Murdin et al.
APPLIED PHYSICS LETTERS (2002)
Terahertz semiconductor-heterostructure laser
R Köhler et al.
NATURE (2002)
Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
WK Hung et al.
APPLIED PHYSICS LETTERS (2002)
Theory of electronic structure evolution in GaAsN and GaPN alloys
PRC Kent et al.
PHYSICAL REVIEW B (2001)
分享论文
