4.6 Article

Exciton localization and migration in individual CdSe quantum wires at low temperatures

期刊

PHYSICAL REVIEW B
卷 80, 期 8, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.081303

关键词

cadmium compounds; electronic density of states; excitons; II-VI semiconductors; photoluminescence; semiconductor quantum wires; wide band gap semiconductors

资金

  1. David and Lucile Packard Foundation
  2. National Science Foundation [CHE-0518427]
  3. Center for Materials Innovation at Washington University
  4. Chemical Sciences, Biosciences, and Geosciences Division of the Office of Basic Energy Sciences, Office of Science
  5. U. S. Department of Energy (DOE)

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Low-temperature (< 40 K) photoluminescence (PL) spectra of individual CdSe nanocrystal quantum wires exhibit narrow (< 5 meV) isolated peaks spanning a range < 50 meV. We attribute these features to emission of excitons localized in shallow (a few meV deep) tight potential minima superimposed on longer-scale and larger-amplitude variations of the potential energy. Spectrally resolved PL dynamics reveal decreasing exciton-decay rates with decreasing emission energy. These observations are consistent with exciton relaxation within a manifold of localization sites characterized by an exponential density of states.

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