4.6 Article

Pressure variation of the valence band width in Ge: A self-consistent GW study

期刊

PHYSICAL REVIEW B
卷 79, 期 15, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.153203

关键词

density functional theory; elemental semiconductors; germanium; valence bands; X-ray emission spectra

资金

  1. ONR [N00014-7-0479]
  2. NSF [QMHP-0802216]
  3. Danish Agency for Science and Innovation [272-08-0257]
  4. Center for Scientific Computing in Aarhus (CSC-AA)
  5. Danish Center for Scientific Computing (DCSC)

向作者/读者索取更多资源

Analyzing x-ray emission spectra (XES) of germanium under pressure Struzhkin [Phys. Rev. Lett. 96, 137402 (2006)] found that the valence band width of diamond Ge does not vary with pressure. This contradicts the usual experience and also what is predicted by density-functional calculations. In the present work we report results of quasiparticle self-consistent GW (QSGW) band calculations for diamond- as well as beta-tin-type Ge under pressure. For both phases we find that the band width increases with pressure. For beta-tin Ge this agrees with experiment and density-functional theory, but for diamond Ge neither the local density approximation nor the QSGW calculations agree with the conclusions drawn from the XES data.

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