期刊
PHYSICAL REVIEW B
卷 79, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.241306
关键词
Fermi level; II-VI semiconductors; k; p calculations; mercury compounds; quantum Hall effect; semiconductor quantum wells
资金
- Swiss NSF
- NCCR Nanoscience
- German DFG [AS327/2-1, Tr950/1-1]
We investigate an effective low-energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter regime and the validity of the effective model are scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge-state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.
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