期刊
VACUUM
卷 122, 期 -, 页码 6-11出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2015.09.005
关键词
ZnO; ZnS; Heterojunction; Band offset; Thin films
资金
- Fundamental Research Funds for the Central Universities [2013QNA04]
- Natural Science Youth Foundation of Jiangsu Province [BK20130198]
The Abstract: In this study, three film samples (ZnO, ZnS and ZnO/ZnS heterojunction) were prepared by a facile magnet sputtering deposition method. All the films exhibited the good crystal quality and smooth surface. Further, the X-ray photoelectron spectroscopy (XPS) was employed to examine the band offset between ZnO and ZnS layers at the interface. It was demonstrated that the ZnO/ZnS bilayers exhibited a II-type band alignment with a valence-band (VB) offset of 1.04 eV, which was accordance with the calculation results. It thus suggested that such a heterostructure was suitable for application as a photocatalyst or photoanode for water splitting or photoelectric conversion. (C) 2015 Elsevier Ltd. All rights reserved.
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