期刊
PHYSICAL REVIEW B
卷 80, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.195320
关键词
conduction bands; electric current; II-VI semiconductors; interface states; Landau levels; magnetoresistance; mercury compounds; p-n junctions; quantum Hall effect; semiconductor quantum wells; spin polarised transport; valence bands
资金
- Dutch Science Foundation NWO/FOM
- European Community
We show how the quantum Hall effect in an inverted-gap semiconductor (with electronlike and holelike states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a one-dimensional pathway. The restriction of the electron motion to a single spatial dimension ensures that all electrons experience the same amount of precession in a parallel magnetic field, so that the full electrical current can be switched on and off. As an example, we calculate the magnetoconductance of a p-n interface in a HgTe quantum well and show how it can be used to measure the spin precession due to bulk inversion asymmetry.
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